Description
Taylor & Francis Ltd Introductory Semiconductor Device Physics 2004 Edition by Greg Parker
Introduction to Semiconductor Device Physics is a popular and established text that offers a thorough introduction to the underlying physics of semiconductor devices. It begins with a review of basic solid state physics, then goes on to describe the properties of semiconductors including energy bands, the concept of effective mass, carrier concentration, and conduction in more detail. Thereafter the book is concerned with the principles of operation of specific devices, beginning with the Gunn Diode and the p-n junction. The remaining chapters cover the on specific devices, including the LED, the bipolar transistor, the field-effect transistor, and the semiconductor laser. The book concludes with a chapter providing a brief introduction to quantum theory.Not overtly mathematical, Introduction to Semiconductor Device Physics introduces only those physical concepts required for an understanding of the semiconductor devices being considered. The author's intuitive style, coupled with an extensive set of worked problems, make this the ideal introductory text for those concerned with understanding electrical and electronic engineering, applied physics, and related subjects. ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field PresentCarrier DiffusionThe Flux EquationThe Einstein RelationTotal Current DensityCarrier Recombination and Diffusion LengthGUNN DIODEDomain FormationThe Differential Form of Gauss's LawCharge Continuity EquationThe Dielectric Relaxation TimeOperation of the TEDP-N JUNCTIONThe p-n Junction in Thermal Equilibriump-n Junction Barrier HeightDepletion Approximation, Electric Field and PotentialMathematical FormulationOne-Sided, Abrupt p-n JunctionApplying Bias to the p-n JunctionQualitative Explanation of Forward BiasThe Ideal Diode EquationReverse BreakdownDepletion CapacitanceLED, PHOTODETECTORS AND SOLAR-CELLThe Light Emitting DiodeMaterials for LEDsMaterials for Visible Wavelength LEDsJunction PhotodetectorsPhotoconductorPhotoconductive Gain AnalysisSolar-CellBIPOLAR TRANSISTORBasic ConceptsBasic StructureDiffusion CapacitanceCurrent ComponentsBJT ParametersPunch-ThroughModels of OperationTwo Simple CircuitsHJBT and PolyemitterVacuum MicroelectronicsFIELD-EFFECT TRANSISTORSThe MOS Diode in Thermal EquilibriumThe MOS Diode with Applied BiasMOS Diode Band DiagramsMOSFETMOSFET Characteristics-QualitativeMOSFET Characteristics-QuantitativeMOSFET-Depletion ModeMOSFET ScalingJFETJFET EquationsTHE SEMICONDUCTOR LASERThe Homojunction LaserThe Double-Heterojunction LaserThe Stripe Laser DiodeIndex GuidingLinewidth NarrowingThe FutureAN INTRODUCTION TO THE QUANTUM THEORYThe Wave-Particle DualityA Failure of Classical PhysicsThe Wave EquationHarmonic WavesComplex RepresentationSchroedinger's EquationSteady-State Form of the Schroedinger EquationThe WavefunctionThe Particle-in-a-BoxThe Quantum-Well LaserAPPENDICESINDEX