Description
Taylor & Francis Ltd Computational Electronicssemiclassical And Quantum Device Modeling And Simulation 2010 Edition by agica Vasileska
Starting with the simplest semiclassical approaches and ending with the description of complex fully quantum-mechanical methods for quantum transport analysis of state-of-the-art devices, Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation provides a comprehensive overview of the essential techniques and methods for effectively analyzing transport in semiconductor devices. With the transistor reaching its limits and new device designs and paradigms of operation being explored, this timely resource delivers the simulation methods needed to properly model state-of-the-art nanoscale devices. The first part examines semiclassical transport methods, including drift-diffusion, hydrodynamic, and Monte Carlo methods for solving the Boltzmann transport equation. Details regarding numerical implementation and sample codes are provided as templates for sophisticated simulation software. The second part introduces the density gradient method, quantum hydrodynamics, and the concept of effective potentials used to account for quantum-mechanical space quantization effects in particle-based simulators. Highlighting the need for quantum transport approaches, it describes various quantum effects that appear in current and future devices being mass-produced or fabricated as a proof of concept. In this context, it introduces the concept of effective potential used to approximately include quantum-mechanical space-quantization effects within the semiclassical particle-based device simulation scheme.Addressing the practical aspects of computational electronics, this authoritative resource concludes by addressing some of the open questions related to quantum transport not covered in most books. Complete with self-study problems and numerous examples throughout, this book supplies readers with the practical understanding required to create their own simulators. Introduction to Computational ElectronicsSi-Based Nanoelectronics Heterostructure Devices in III-V or II-VI TechnologyModeling of Nanoscale DevicesThe Content of This BookIntroductory ConceptsCrystal StructureSemiconductorsBand Structure Preparation of Semiconductor Materials Effective Mass Density of States Electron MobilitySemiconductor StatisticsSemiconductor DevicesSemiclassical Transport TheoryApproximations for the Distribution FunctionBoltzmann Transport EquationRelaxation-Time ApproximationRode's Iterative MethodScattering Mechanisms: Brief DescriptionImplementation of the Rode Method for 6H-SiC Mobility CalculationThe Drift-Diffusion Equations and Their Numerical SolutionDrift-Diffusion Model DerivationDrift-Diffusion Application ExampleHydrodynamic ModelingIntroduction Extensions of the Drift-Diffusion ModelStratton's Approach Hydrodynamic (Balance, Blotekjaer) Equations ModelThe Need for Commercial Semiconductor Device Modeling ToolsState-of-the-Art Commercial PackagesThe Advantages and Disadvantages of Hydrodynamic Models: Simulations of Different Generation FD SOI DevicesParticle-Based Device Simulation MethodsDirect Solution of Boltzmann Transport Equation: Monte Carlo MethodMulti-Carrier EffectsDevice SimulationsCoulomb Force Treatment within a Particle-Based Device Simulation SchemeRepresentative Simulation Results of Multiparticle and Discrete Impurity EffectsModeling Thermal Effects in Nano-DevicesSome General Aspects of Heat ConductionClassical Heat Conduction in Solids Form of the Heat Source TermModeling Heating Effects with Commercial Simulation PackagesThe ASU Particle-Based Approach to Lattice Heating in Nanoscale DevicesOpen Problems Quantum Corrections to Semiclassical ApproachesOne-Dimensional Quantum-Mechanical Space QuantizationQuantum Corrections to Drift-Diffusion and Hydrodynamic SimulatorsThe Effective Potential Approach in Conjunction with Particle-Based SimulationsDescription of Gate Current Models Used in Device SimulationsMonte Carlo-k _ p-1D Schroedinger Solver for Modeling Transport in p-Channel Strained SiGe DevicesQuantum Transport in Semiconductor SystemsTunnelingGeneral NotationTransfer Matrix ApproachLandauer Formula and Usuki MethodFar-From-Equilibrium Quantum TransportMixed States and Distribution FunctionIrreversible Processes and MASTER EquationsThe Wigner Distribution FunctionGreen's FunctionsNonequilibrium Keldysh Green's FunctionsLow Field Transport in Strained-Si Inversion LayersNEGF in a Quasi-1D FormulationQuantum Transport in 1D-Resonant Tunneling DiodesCoherent High-Field Transport in 2D and 3DConclusionsAppendix A: Electronic Band Structure CalculationAppendix B: Poisson Equation SolversAppendix C: Computational ElectromagneticsAppendix D: Stationary and Time-Dependent Perturbation TheoryEach chapter concludes with "Problems" and "References"