Description
Taylor & Francis Ltd Strained-Si Heterostructure Field Effect Devices 2007 Edition by C.K Maiti, S Chattopadhyay, L.K Bera
A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated with the front-end aspects of extending CMOS technology via strain engineering. The book provides the basis to compare existing technologies with the future technological directions of silicon heterostructure CMOS.After an introduction to the material, subsequent chapters focus on microelectronics, engineered substrates, MOSFETs, and hetero-FETs. Each chapter presents recent research findings, industrial devices and circuits, numerous tables and figures, important references, and, where applicable, computer simulations. Topics covered include applications of strained-Si films in SiGe-based CMOS technology, electronic properties of biaxial strained-Si films, and the developments of the gate dielectric formation on strained-Si/SiGe heterolayers. The book also describes silicon hetero-FETs in SiGe and SiGeC material systems, MOSFET performance enhancement, and process-induced stress simulation in MOSFETs.From substrate materials and electronic properties to strained-Si/SiGe process technology and devices, the diversity of R&D activities and results presented in this book will no doubt spark further development in the field. INTRODUCTION Heterostructure Field-Effect DevicesSubstrate EngineeringGate Dielectrics on Engineered Substrates Strained-Si Technology: Process Integration Nonclassical CMOS StructuresStrain-Engineered Hetero-FETs: Modeling and SimulationSTRAIN ENGINEERING IN MICROELECTRONICS Stress Induced during Manufacturing Global vs. Local Strain Substrate-Induced StrainProcess-Induced StressStress/Strain AnalysisSTRAIN-ENGINEERED SUBSTRATES EpitaxyHeteroepitaxy and Strain ControlEngineered Substrates: TechnologyCharacterization of Strained LayersEngineered SubstratesELECTRONIC PROPERTIES OF ENGINEERED SUBSTRATES Substrate-Induced Strained-SiCarrier LifetimeMobility: Thickness DependenceMobility: Temperature Dependence Diffusion in Strained-SiProcess-Induced Strained-SiUniaxial vs. Biaxial Strain EngineeringGATE DIELECTRICS ON ENGINEERED SUBSTRATESStrained-Si MOSFET Structures Thermal Oxidation of Strained-Si Rapid Thermal OxidationPlasma Nitridation of Strained-Si Effect of Surface Roughness Effect of Strained-Si Layer Thickness High-k Gate Dielectrics on Strained-SiGate Dielectrics on GeHETEROSTRUCTURE SiGe/SiGeC MOSFETS SiGe/SiGeC:Material ParametersSiGe Hetero-FETs: Structures and OperationSiGe p-MOSFETs on SOISiGeC Hetero-FETs SiGe-Based HEMTsDesign IssuesSTRAINED-Si HETEROSTRUCTURE MOSFETS Operating PrincipleUniaxial Stress: Process Flow Strained-Si MOSFETs with SiC-Stressor Biaxial Strain: Process Flow Scaling of Strained-Si MOSFETsStrained-Si MOSFETs: Reliability Industry Example: TSMC Industry Example: AMDMODELING AND SIMULATION OF HETERO-FETS Simulation of Hetero-FETs Modeling of Strained-SiMaterial Parameters Simulation of Strained-Si n-MOSFETsCharacterization of Strained-Si Hetero-FETs TCAD: Strain-Engineered Hetero-FETs SPICE Parameter ExtractionPerformance AssessmentSummaries and References appear in each chapter.