Description
Taylor & Francis Ltd Silicon Heterostructure Handbookmaterials Fabrication Devices Circuits And Applications Of Sige And Si Strained Layer Epitaxy 2006 Edition by John D. Cressler
An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source.Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology.Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation. Foreword; B.S. MeyersonINTRODUCTIONThe Big Picture; J.D. CresslerA Brief History of the Field; J.D. CresslerSiGe AND Si STRAINED-LAYER EPITAXYOverview: SiGe and Si Strained-Layer Epitaxy; J.D. CresslerStrained SiGe and Si Epitaxy; B. Tillack and P. ZaumseilSi/SiGe(C) Eptiaxy by RTCVD; D. Dutartre, F. Deleglise, C. Fellous, L. Rubaldo, and A. TalbotMBE Growth Techniques; M. Oehme and E. KasperUHV/CVD Growth Techniques; T.N. AdamDefects and Diffusion in SiGe and Strained Si; A.R. Peaker and V. MarkevichStability Constraints in SiGe Epitaxy; A. FischerElectronic Properties of Strained Si/SiGe and Si1-yCy Alloys; J.L. HoytCarbon Doping of SiGe; H.J. OstenContact Metallization on Silicon-Germanium; C.K. MaitiSelective Etching Techniques for SiGe/Si; S. Monfray, S. Borel, and T. SkotnickiFABRICATION OF SiGe HBT BiCMOS TECHNOLOGYOverview: Fabrication of SiGe HBT BiCMOS Technology; J.D. CresslerDevice Structures and BiCMOS Integration; D.L. HarameSiGe HBTs on CMOS-Compatible SOI; J. Cai and T.H. NingPassive Components; J.N. BurghartzIndustry Examples at State-of-the-Art: IBM; A.J. Joseph and J.S. DunnIndustry Examples at State-of-the-Art: Jazz; P.H.G. KempfIndustry Examples at State-of-the-Art: Hitachi; K. WashioIndustry Examples at State-of-the-Art: Infineon; T.F. Meister, H. Schafer, W. Perndl, and J. BoeckIndustry Examples at State-of-the-Art: IHP; D. KnollIndustry Examples at State-of-the-Art: ST; A. Chantre, M. Laurens, B. Szelag, H. Baudry, P. Chevalier, J. Mourier, G. Troillard, B. Martinet, M. Marty, and A. MonroyIndustry Examples at State-of-the-Art: Texas Instruments; B. El-Kareh, S. Balster, P. Steinmann, and H. YasudaIndustry Examples at State-of-the-Art: Philips; R. Colclaser and P. DeixlerSiGe HBTsOverview: SiGe HBTs; J.D. CresslerDevice Physics; J.D. CresslerSecond-Order Effects; J.D. CresslerLow-Frequency Noise; G. NiuBroadband Noise; D.R. GreenbergMicroscopic Noise Simulation; G. NiuLinearity; G. Niupnp SiGe HBTs; J.D. CresslerTemperature Effects; J.D. CresslerRadiation Effects; J.D. CresslerReliability Issues; J.D. CresslerSelf-Heating and Thermal Effects; J-S. RiehDevice-Level Simulation; G. NiuSiGe HBT Performance Limits; G. Freeman, A. Stricker, J-S. Rieh, and D.R. GreenbergHETEROSTRUCTURE FETsOverview: Heterostructure FETs; J.D. CresslerBiaxial Strained Si CMOS; K. RimUniaxial Stressed Si MOSFET; S.E. ThompsonSiGe-Channel HFETs; S. BanerjeeIndustry Examples at State-of-the-Art: Intel's 90 nm Logic Technologies; S.E. ThompsonOTHER HETEROSTRUCTURE DEVICESOverview: Other Heterostructure Devices; J.D. CresslerResonant Tunneling Devices; S. Tsujino, D. Grutzmacher, and U. GennserIMPATT Diodes; E. Kasper and M. OehmeEngineered Substrates for Electronic and Optoelectronic Systems; E.A. FitzgeraldSelf-Assembling Nanostructures in Ge(Si)-Si Heteroepitaxy; R. HullOPTOELECTRONIC COMPONENTSOverview: Optoelectronic Components; J.D. CresslerSi-SiGe LEDs; K.L. Wang, S. Tong, and H.J. KimNear-Infrared Detectors; L. Colace, G. Masini, and G. AssantoSi-Based Photonic Transistors for Integrated Optoelectronics; W.X. Ni and A. ElfvingSi-SiGe Quantum Cascade Emitters; D.J. PaulMEASUREMENT AND MODELINGOverview: Measurement and Modeling; J.D. CresslerBest-Practice AC Measurement Techniques; R.A. GrovesIndustrial Application of TCAD for SiGe Development; D.C. Sheridan, J.B. Johnson, and R. KrishnasamyCompact Modeling of SiGe HBTs: HICUM; M. SchroeterCompact Modeling of SiGe HBTs: MEXTRAM; S. MijalkovicCAD Tools and Design Kits; S.E. StrangParasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs; R. SinghTransmission Lines on Si; Y.V. TretiakovImproved De-Embedding Techniques; Q. LiangCIRCUITS AND APPLICATIONSOverview: Circuits and Applications; J.D. CresslerSiGe as an Enabler for Wireless Communications Systems; L.E. Larson and D.Y.C. LieLNA Optimization Strategies; Q. LiangLinearization Techniques; L.C.N. de Vreede and M.P. van der HeijdenSiGe MMICs; H. SchumacherSiGe Millimeter-Wave ICs; J-F. LuyWireless Building Blocks Using SiGe HBTs; J.R. LongDirect Conversion Architectures for SiGe Radios; S. Chakraborty and J. LaskarRF MEMS Techniques in Si/SiGe; J. PapapolymerouWideband Antennas on Silicon; M.M. Tentzeris and R.L. LiPackaging Issues for SiGe Circuits; K. Lim, S. Pinel, and J. LaskarIndustry Examples at State-of-the-Art: IBM; D.J. Friedman and M. MeghelliIndustry Examples at State-of-the-Art: Hitachi; K. WashioIndustry Examples at State-of-the-Art: ST; D. BelotAPPENDICESProperties of Silicon and Germanium; J.D. CresslerThe Generalized Moll-Ross Relations; J.D. CresslerIntegral Charge-Control Relations; M. SchroeterSample SiGe HBT Compact Model Parameters; R.M. MalladiINDEX